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| MITSUBISHI SEMICONDUCTOR MGFC41V3642 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC41V3642 is an internally impedence matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high raliability. OUTLINE DRAWING 24+ /-0.3 R1.25 (1) Unit: millimeters (inches) FEATURES Internally matched to 50ohm system High output power P1dB = 14W (TIP.) @ f=3.6 - 4.2 Hz High power gain GLP = 12.5 dB (TYP.) @ f=3.6 - 4.2 GHz High power added efficiency Eadd = 40 % (TYP.) @ f=3.6 - 4.2 GHz Low Distortion[Item-51] IM3=-45 dBc(TYP.)@Po=30dBm S.C.L. 2M IN 0.6+ /-0.15 R1.2 17.4+/-0.3 8.0+/-0.2 (2) 2M IN (3) 20.4+ /-0.2 APPLICATION 4.0+/-0.4 QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS = 10(V) ID = 3.4 (A) Rg = 50(ohm) (1): GATE (2): SOURCE (FLANGE) (3): DRAIN Refer to Bias Procedure GF-18 ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation *1 Channel temperature Storage temperature Ratings -15 -15 12 -30 63 53.6 175 -65 / +175 Unit V V A mA mA W DegreesC DegreesC *1 : Tc=25 DegreesC ABSOLUTE MAXIMUM RATINGS Symbol IDSS gm VGS(off) P1dB GLP ID Eadd IM3 *2 Rth(ch-c) Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion Thermal resistance *1 Delta Vf method Test conditions Min VDS = 3V , VGS = 0V VDS = 3V , ID = 3.0A VDS = 3V , ID = 30mA 40 VDS = 10V , ID = 3.4A , f = 3.6 - 4.2 GHz 11 -42 Limits Typ 3 41.5 12.5 3.3 40 -45 Max 12 -5 2.8 A S V dBm dB A % dBc deg.C/W 1.4 Unit *1 : Channel to case *2 : Item-51,2tone test,Po=30dBm Single Carrier Level,f=4.2GHz,Delta f=10MHz MITSUBISHI ELECTRIC 0.1 item 01 : 3.6 - 4.2 GHz band power amplifier item 51 : 3.6 - 4.2 GHz band digital radio communication 2.4+/-0.2 13.4 15.8 Oct-'03 MITSUBISHI SEMICONDUCTOR MGFC41V3642 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC |
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